公开(公告)号：US09000508B2

公开(公告)日：2015-04-07

申请号：US14024844

申请日：2013-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun Lee ,  Sunhil Shim ,  Jaehoon Jang ,  Sunghoi Hur ,  Hansoo Kim ,  Kihyun Kim

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/792 ,  G11C16/28 ,  H01L27/115 ,  H01L29/788

CPC classification number: G11C16/28 ,  G11C16/14 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L29/7889 ,  H01L29/7926

Abstract: Nonvolatile memory devices according to embodiments of the invention include highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.

Abstract translation: 根据本发明的实施例的非易失性存储器件包括高度集成的非易失性存储器单元的垂直堆叠。 这些垂直堆叠的存储器单元可以利用虚拟存储器单元来补偿当相对大量的存储单元垂直地堆叠在半导体衬底上时使用电连接的多个垂直子串的过程伪像，否则会产生相对较差的功能性存储单元串 系列。