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    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
    1.
    发明公开
    SENSOR-EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240324393A1

    公开(公告)日：2024-09-26

    申请号：US18605134

    申请日：2024-03-14

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sungyoung YUN ,  Kyung Bae PARK ,  Chul Joon HEO ,  Hwijoung SEO

    IPC分类号： H10K59/65 ,  G06V40/13 ,  H10K59/35 ,  H10K59/80 ,  H10K102/00

    CPC分类号： H10K59/65 ,  G06V40/1318 ,  H10K59/353 ,  H10K59/80518 ,  H10K2102/351

    摘要： A sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. Each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.

    SENSOR-EMBEDDED DISPLAY PANEL AND SENSOR AND ELECTRONIC DEVICE
    2.
    发明公开
    SENSOR-EMBEDDED DISPLAY PANEL AND SENSOR AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240147744A1

    公开(公告)日：2024-05-02

    申请号：US18472930

    申请日：2023-09-22

    申请人： Samsung Electronics Co., Ltd.

    发明人： Sungyoung YUN ,  Hyeong-Ju KIM ,  Kyung Bae PARK ,  Jungyun WON ,  Bongsu KIM ,  Seongyong PARK ,  Jeong Il PARK

    IPC分类号： H10K39/34 ,  H10K59/35

    CPC分类号： H10K39/34 ,  H10K59/353 ,  H10K2101/40

    摘要： A display panel may include a light emitting element including a light emitting layer and a sensor including a photosensitive layer on a substrate. The light emitting element and the sensor each may include respective portions of first and second common auxiliary layers, which may be continuous under and over the light emitting layer and the photosensitive layer. The first and second common auxiliary layers respectively may include a hole transport material and an electron transport material. The photosensitive layer may include first and second semiconductor layers close to the first and second common auxiliary layers, respectively. The first and second semiconductor layers respectively may include a p-type semiconductor and an n-type semiconductor. The second semiconductor layer may have an uneven surface facing the second common auxiliary layer and may have an average roughness (Rq) of greater than or equal to about 5 nm.

    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE
    8.
    发明公开
    SENSOR EMBEDDED DISPLAY PANEL AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240196635A1

    公开(公告)日：2024-06-13

    申请号：US18459942

    申请日：2023-09-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Feifei FANG ,  Sungyoung YUN ,  Chul Joon HEO ,  Hyeong-Ju KIM ,  Kyung Bae PARK ,  Hwijoung SEO ,  Tae Jin CHOI

    IPC分类号： H10K39/34 ,  G06V40/13 ,  H10K59/35

    CPC分类号： H10K39/34 ,  G06V40/1318 ,  H10K59/353 ,  H10K2101/40

    摘要： A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.