公开(公告)号：US20190324603A1

公开(公告)日：2019-10-24

申请号：US16460283

申请日：2019-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Hyuck SHIN ,  Sung-Hwan KIM ,  Doo-Hwan KIM ,  Jae-Yeol LEE ,  Kun-Woo BAEK ,  Hee-Ran YOUN

IPC: G06F3/0482 ,  G06F3/0481 ,  G06F3/0487 ,  H04L29/06

Abstract: A display device for executing a plurality of applications and a method for controlling the display device are provided. The method includes displaying a plurality of windows in which applications are executed respectively, receiving an iconize input for executing the plurality of windows, checking window information about each of the plurality of windows and discontinuing the displaying of the plurality of windows, and generating a shortcut icon for executing the plurality of windows simultaneously, based on the checked window information.

公开(公告)号：US20140164957A1

公开(公告)日：2014-06-12

申请号：US14096568

申请日：2013-12-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Hyuck SHIN ,  Sung-Hwan KIM ,  Doo-Hwan KIM ,  Jae-Yeol LEE ,  Kun-Woo BAEK ,  Hee-Ran YOUN

IPC: G06F3/0481 ,  G06F3/0487 ,  H04L29/06 ,  G06F3/0482

CPC classification number: G06F3/0482 ,  G06F3/0481 ,  G06F3/04817 ,  G06F3/0487 ,  G06F2203/04803 ,  H04L65/403

Abstract: A display device for executing a plurality of applications and a method for controlling the display device are provided. The method includes displaying a plurality of windows in which applications are executed respectively, receiving an iconize input for executing the plurality of windows, checking window information about each of the plurality of windows and discontinuing the displaying of the plurality of windows, and generating a shortcut icon for executing the plurality of windows simultaneously, based on the checked window information.

Abstract translation: 提供了用于执行多个应用的​​显示装置和用于控制显示装置的方法。 该方法包括显示分别执行应用的多个窗口，接收用于执行多个窗口的图标化输入，检查关于多个窗口中的每个窗口的窗口信息，并且停止显示多个窗口，以及生成快捷方式 基于所检查的窗口信息同时执行多个窗口的图标。

公开(公告)号：US20150235852A1

公开(公告)日：2015-08-20

申请号：US14535437

申请日：2014-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Hee LIM ,  Ki-Jae HUR ,  Sung-Hwan KIM ,  Hae-In JUNG ,  Soo-Jin HONG

IPC: H01L21/265 ,  H01L21/324 ,  H01L29/66 ,  H01L21/306

CPC classification number: H01L21/26506 ,  H01L21/324 ,  H01L29/4236 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An ion implantation process is performed at an upper portion of the substrate exposed by the gate structure, so that an ion implantation region is formed to have an expanded volume. The ion implantation process uses ions that are identical to a material of the substrate.

Abstract translation: 在制造半导体器件的方法中，在衬底上形成栅极结构。 在由栅极结构暴露的衬底的上部进行离子注入工艺，使得形成离子注入区域以具有膨胀的体积。 离子注入工艺使用与衬底材料相同的离子。