公开(公告)号：US20220336451A1

公开(公告)日：2022-10-20

申请号：US17856157

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGHAN LEE ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US20210074701A1

公开(公告)日：2021-03-11

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

公开(公告)号：US11410997B2

公开(公告)日：2022-08-09

申请号：US16855321

申请日：2020-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghan Lee ,  Taeyong Kwon ,  Minchul Sun ,  Byounggi Kim ,  Suhyeon Park ,  Kihwan Lee

IPC: H01L27/088 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/66

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.