公开(公告)号：US20230094036A1

公开(公告)日：2023-03-30

申请号：US17838551

申请日：2022-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Panjae Park ,  Subin Choi ,  Chulhong Park

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/417 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes an active region extending on a substrate in a first direction, a gate electrode intersecting the active region and extending in a second direction, perpendicular to the first direction, a contact structure disposed on the active region on one side of the gate electrode and extending in the second direction, and a first via disposed on the contact structure to be connected to the contact structure and has a shape in which a length in the second direction is greater than a length in the first direction. A plurality of first metal interconnections are provided, which extend in the first direction on the first via, and are connected to the first via. A second via is provided, which is disposed on the plurality of first metal interconnections to be connected to the plurality of first metal interconnections and has a shape in which a length in the second direction is greater than a length in the first direction.