公开(公告)号：US20220375934A1

公开(公告)日：2022-11-24

申请号：US17569795

申请日：2022-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhun PARK ,  Deokhan BAE ,  Myungyoon UM ,  Yuri LEE ,  Yoonyoung JUNG ,  Sooyeon HONG

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/06

Abstract: An integrated circuit device includes: a first fin-type active region and a second fin-type active region that extend on a substrate in a straight line in a first horizontal direction and are adjacent to each other in the first horizontal direction; a fin isolation region arranged between the first fin-type active region and the second fin-type active region on the substrate and including a fin isolation insulation structure extending in a second horizontal direction perpendicular to the first horizontal direction; and a plurality of gate lines extending on the first fin-type active region in the second horizontal direction, wherein a first gate line that is closest to the fin isolation region from among the plurality of gate lines is inclined to be closer to a center of the fin isolation region in the first horizontal direction from a lowermost surface to an uppermost surface of the first gate line.