公开(公告)号：US11599284B2

公开(公告)日：2023-03-07

申请号：US17331123

申请日：2021-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Min Lee ,  Soong-Mann Shin ,  Kyung Phil Yoo

IPC: G06F3/06 ,  G06F1/26 ,  G06F13/16 ,  G06F12/02

Abstract: A storage system is provided. The storage system includes a storage device including a plurality of nonvolatile memories configured to transmit storage throughput information, and a host device configured to change connection configurations for the storage device based on the storage throughput information, wherein the host device changes the connection configurations by changing configurations for transmitter and receiver paths between the storage device and the host device independently.

公开(公告)号：US09798469B2

公开(公告)日：2017-10-24

申请号：US14662736

申请日：2015-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： YoungWook Kim ,  Kui-Yon Mun ,  Soong-Mann Shin ,  Jae-Sung Yu

IPC: G06F3/06 ,  G11C16/04 ,  G11C7/04

CPC classification number: G06F3/061 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688 ,  G11C7/04 ,  G11C16/0466

Abstract: A storage device includes a nonvolatile memory and a memory controller. The nonvolatile memory performs read, write, and erase operations. The memory controller operates in an operating mode where the memory controller exchanges a voltage signal, set to a reference voltage level within an allowable range, with the nonvolatile memory or receives the voltage signal from an external device. When operating in the operating mode, the memory controller optimizes an operating frequency of the nonvolatile memory depending on a voltage level of the voltage signal and a temperature.