公开(公告)号：US20240257849A1

公开(公告)日：2024-08-01

申请号：US18630352

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/10 ,  G11C8/18

CPC classification number: G11C7/222 ,  G06F13/1689 ,  G11C7/1066 ,  G11C7/1093 ,  G11C8/18

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20210319818A1

公开(公告)日：2021-10-14

申请号：US17355746

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20200227100A1

公开(公告)日：2020-07-16

申请号：US16834595

申请日：2020-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin KIM ,  YoungWook KIM

IPC: G11C7/22 ,  G06F13/16 ,  G11C8/18 ,  G11C7/10

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.

公开(公告)号：US20190122714A1

公开(公告)日：2019-04-25

申请号：US15995533

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soong-Man SHIN ,  Hyungjin Kim ,  YoungWook Kim

IPC: G11C7/22 ,  G11C7/10 ,  G11C8/18 ,  G06F13/16

Abstract: A storage device including a nonvolatile memory device including memory blocks and a controller connected with the nonvolatile memory device through data input and output lines and a data strobe line may be provided. The nonvolatile memory device and the controller may be configured to perform training on the data input and output lines by adjusting a delay of a data strobe signal sent through the data strobe line and adjust delays of the data input and output lines based on the training result.