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1.发明授权Nonvolatile memory devices including simultaneous impedance calibration and input command 有权非易失性存储器件包括同时阻抗校准和输入命令公开(公告)号：US09361985B2
公开(公告)日：2016-06-07
申请号：US14144659
申请日：2013-12-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Kim , Soonbok Jang
CPC classification number: G11C16/06 , G11C7/04 , G11C16/10 , G11C16/20 , G11C29/028 , G11C29/50008 , G11C2029/0409 , G11C2207/2254
Abstract: An operating method of a nonvolatile memory device is provided which includes receiving a command sequence; detecting whether the input command sequence accompanies an impedance calibration operation; and if the input command sequence accompanies the impedance calibration operation, simultaneously performing an operation corresponding to the input command sequence and the impedance calibration operation.
Abstract translation: 提供了一种非易失性存储器件的操作方法，包括接收命令序列; 检测输入命令序列是否伴随阻抗校准操作; 并且如果输入命令序列伴随着阻抗校准操作，则同时执行与输入命令序列和阻抗校准操作相对应的操作。
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2.发明申请公开(公告)号：US20140185384A1
公开(公告)日：2014-07-03
申请号：US14144659
申请日：2013-12-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong KIM , Soonbok Jang
CPC classification number: G11C16/06 , G11C7/04 , G11C16/10 , G11C16/20 , G11C29/028 , G11C29/50008 , G11C2029/0409 , G11C2207/2254
Abstract: An operating method of a nonvolatile memory device is provided which includes receiving a command sequence; detecting whether the input command sequence accompanies an impedance calibration operation; and if the input command sequence accompanies the impedance calibration operation, simultaneously performing an operation corresponding to the input command sequence and the impedance calibration operation.
Abstract translation: 提供了一种非易失性存储器件的操作方法，包括接收命令序列; 检测输入命令序列是否伴随阻抗校准操作; 并且如果输入命令序列伴随着阻抗校准操作，则同时执行与输入命令序列和阻抗校准操作相对应的操作。
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