Invention Grant
- Patent Title: Nonvolatile memory devices including simultaneous impedance calibration and input command
- Patent Title (中): 非易失性存储器件包括同时阻抗校准和输入命令
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Application No.: US14144659Application Date: 2013-12-31
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Publication No.: US09361985B2Publication Date: 2016-06-07
- Inventor: Dong Kim , Soonbok Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2013-0000288 20130102
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/06 ; G11C7/04 ; G11C16/10 ; G11C16/20 ; G11C29/02 ; G11C29/50 ; G11C29/04
Abstract:
An operating method of a nonvolatile memory device is provided which includes receiving a command sequence; detecting whether the input command sequence accompanies an impedance calibration operation; and if the input command sequence accompanies the impedance calibration operation, simultaneously performing an operation corresponding to the input command sequence and the impedance calibration operation.
Public/Granted literature
- US20140185384A1 NONVOLATILE MEMORY DEVICES INCLUDING SIMULTANEOUS IMPEDANCE CALIBRATION Public/Granted day:2014-07-03
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