公开(公告)号：US20240105773A1

公开(公告)日：2024-03-28

申请号：US18332784

申请日：2023-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae Jun YU ,  Kyung In CHOI ,  Soon Wook JUNG

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0673 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: There is provided a semiconductor device having improved performance and reliability. A semiconductor device comprises an active pattern extending in a first direction, a gate structure including a gate electrode, a gate spacer, and a gate capping pattern on the active pattern, the gate electrode extending in a second direction different from the first direction and the gate capping pattern including a lower gate capping pattern and an upper gate capping pattern; a source/drain pattern disposed on the active pattern; and a source/drain etch stop film disposed on an upper surface of the source/drain pattern and extending along a sidewall of the gate spacer. The lower gate capping pattern is disposed on an upper surface of the gate electrode and an upper surface of the gate spacer, and the source/drain etch stop film does not extend along a sidewall of the lower gate capping pattern.