公开(公告)号：US12016176B2

公开(公告)日：2024-06-18

申请号：US17368130

申请日：2021-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeon-Woo Jang ,  Soo Ho Shin

IPC: H10B12/00

CPC classification number: H10B12/50 ,  H10B12/0335 ,  H10B12/09 ,  H10B12/315 ,  H10B12/34

Abstract: A semiconductor memory device comprises a substrate which includes a cell region, and a peri region defined around the cell region, the cell region including an active region defined by an element separation film, a storage pad connected to the active region of the cell region, a peri gate structure placed on the substrate of the peri region, a peri contact plug placed on both sides of the peri gate structure and connected to the substrate, a first interlayer insulating film which is placed on the storage pad and the pen contact plug, and includes a nitride-based insulating material, and an information storage unit connected to the storage pad, wherein a thickness of the first interlayer insulating film on an upper surface of the storage pad is smaller than a thickness of the first interlayer insulating film on an upper surface of the peri contact plug.

公开(公告)号：US11832442B2

公开(公告)日：2023-11-28

申请号：US17493671

申请日：2021-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeon Woo Jang ,  Soo Ho Shin ,  Dong Sik Park ,  Jong Min Lee ,  Ji Hoon Chang

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/0335 ,  H10B12/053 ,  H10B12/315 ,  H10B12/34 ,  H10B12/482 ,  H10B12/30

Abstract: The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.