公开(公告)号：US20240357800A1

公开(公告)日：2024-10-24

申请号：US18528854

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANGHO LEE ,  Moonyoung Jeong ,  Sihyun Kim ,  Yoongi Hong

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: A semiconductor device includes a first bit line extending in a first direction, a first semiconductor pattern extending in a second direction and including first and second ends opposite to each other, the first end of the first semiconductor pattern being in contact with the first bit line, a first word line on the first semiconductor pattern and extending in a third direction, a selection line adjacent to the second end of the first semiconductor pattern and parallel to the third direction, a second semiconductor pattern interposed between the selection line and the first semiconductor pattern and having first end and second ends opposite to each other, a second bit line extending in the first direction and in contact with the first end of the second semiconductor pattern, and a source line extending in the first direction and in contact with the second end of the second semiconductor pattern.