公开(公告)号：US20250081448A1

公开(公告)日：2025-03-06

申请号：US18672227

申请日：2024-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmuk Kim ,  Kiseok Lee ,  Keunnam Kim ,  Hongjun Lee

IPC: H10B12/00

Abstract: A semiconductor device includes a first gate structure in a cell region of a substrate, where the substrate includes a peripheral circuit region, a bit line structure on the cell region of the substrate, a cell capacitor structure on the bit line structure, a decoupling capacitor structure on the peripheral circuit region of the substrate, and a second gate structure on the decoupling capacitor structure.

公开(公告)号：US20250071969A1

公开(公告)日：2025-02-27

申请号：US18623816

申请日：2024-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yun Choi ,  Seungmuk Kim ,  Inwoo Kim ,  Sohyun Park ,  Hanseong Shin ,  Kiseok Lee ,  Hyunjin Lee ,  Hosang Lee ,  Hongjun Lee ,  Heejae Chae

IPC: H10B12/00 ,  H01L21/027 ,  H01L21/311

Abstract: A semiconductor device may include a plurality of active patterns disposed on a substrate, a gate structure extending in a first direction, a bit line structure extending in a second direction, and a plurality of capacitors electrically connected to the plurality of active patterns, respectively, the plurality of active patterns having a shape extending in a third direction oblique to the first and second directions, the gate structure passing through centers of the plurality of active patterns, the bit line structure connected to first end portions of the plurality of active patterns, the plurality of capacitors connected to second end portions of the plurality of active patterns, respectively, the first end portion and the second end portion positioned at opposite sides with respect to the gate structure, and the first end portion and the second end portion having point-symmetrical shapes with respect to a center of the active pattern.