公开(公告)号：US20240069446A1

公开(公告)日：2024-02-29

申请号：US18310073

申请日：2023-05-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeungKyo LEE ,  Hyuncheol KIM ,  Woojin JUNG

IPC: G03F7/20 ,  H01L21/027 ,  H01L23/544 ,  H10B12/00

CPC classification number: G03F7/70625 ,  G03F7/70683 ,  H01L21/0273 ,  H01L23/544 ,  H10B12/02 ,  H10B12/488 ,  G03F1/42

Abstract: A semiconductor device may include a substrate including a chip region and an edge region enclosing the chip region, and at least one coarse key pattern divided into fine key patterns on the edge region, extend in a first direction and are spaced apart from each other in a second direction crossing the first direction. Each of the fine key patterns may include a first key pattern, extending in the first direction, and a second key pattern including a first portion extending along a side surface of the first key pattern, and a second portion extending along an opposite side surface of the first key pattern. A width of each of the first and second portions may be smaller than a width of the first key pattern, when measured in the second direction.