公开(公告)号：US20140103405A1

公开(公告)日：2014-04-17

申请号：US13948696

申请日：2013-07-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong-Kwang Chang ,  Hak-Yoon Ahn ,  Young-Mook Oh ,  Jung-Hoon Lee ,  Seung-Ho Chae

IPC: H01L29/78 ,  H01L21/302 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/302 ,  H01L29/66477 ,  H01L29/66575

Abstract: A method is provided for fabricating a semiconductor device that includes: forming a gate pattern on a substrate; forming a source/drain in the vicinity of the gate pattern; forming an etch stop film, which covers the gate pattern and the source/drain, on the substrate; forming an interlayer insulating film on the etch stop film; forming a shared contact hole that exposes the gate pattern and the source/drain by etching the interlayer insulating film, wherein a polymer is generated in the shared contact hole a process of etching the interlayer insulating film; removing the polymer by performing etching using hydrogen gas, nitrogen gas or a mixture of hydrogen and nitrogen before etching the etch stop film; and etching the etch stop film.

Abstract translation: 提供一种用于制造半导体器件的方法，该半导体器件包括：在衬底上形成栅极图案; 在栅极图案附近形成源极/漏极; 在衬底上形成覆盖栅极图案和源极/漏极的蚀刻停止膜; 在蚀刻停止膜上形成层间绝缘膜; 通过蚀刻层间绝缘膜形成暴露栅极图案和源极/漏极的共用接触孔，其中在共用接触孔中产生聚合物，蚀刻层间绝缘膜的工艺; 在蚀刻蚀刻停止膜之前通过使用氢气，氮气或氢和氮的混合物进行蚀刻来去除聚合物; 并蚀刻蚀刻停止膜。