公开(公告)号：US20130203195A1

公开(公告)日：2013-08-08

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Seung Woo CHOI ,  Gyeong Seon PARK ,  Shi Young LEE

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

公开(公告)号：US20150279707A1

公开(公告)日：2015-10-01

申请号：US14522937

申请日：2014-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In SIM ,  Gyeong Seon PARK ,  Kyung Ja LIM ,  Seung Woo CHOI ,  O Hak KWON

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/6838 ,  B32B43/006 ,  H01L21/67092 ,  H01L21/68735 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1132 ,  Y10T156/1153 ,  Y10T156/1168 ,  Y10T156/1911 ,  Y10T156/1944 ,  Y10T156/1978

Abstract: There is provided a substrate separation device and method for separating a growth substrate from a laminate structure which includes a support substrate, a semiconductor layer, and the growth substrate. The device includes: a first base which is configured to hold the laminate structure thereon, and includes a first holding unit configured to hold the support substrate defining a bottom surface of the laminate structure and a heating unit configured to heat the laminate structure; and a second base including a second holding unit disposed above the first holding unit and configured to hold the growth substrate defining an upper surface of the laminate structure.

Abstract translation: 提供了一种用于从包括支撑衬底，半导体层和生长衬底的层压结构分离生长衬底的衬底分离装置和方法。 该装置包括：第一基座，其构造成在其上保持层压结构，并且包括第一保持单元，其构造成保持限定层压结构的底表面的支撑基板;以及加热单元，其构造成加热层叠结构; 以及第二基座，其包括设置在所述第一保持单元上方的第二保持单元，并且构造成保持限定所述层叠结构的上表面的所述生长基板。

公开(公告)号：US20130113005A1

公开(公告)日：2013-05-09

申请号：US13669179

申请日：2012-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan Ho LEE ,  Seung Woo CHOI ,  Sang Yeob SONG ,  Jong Rak SOHN

IPC: H01L33/10

CPC classification number: H01L33/10 ,  H01L33/42 ,  H01L33/46 ,  H01L2224/14 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在发光结构上形成反射结构，并且包括由多个纳米棒和多个纳米棒之间的空气填充空间以及形成在纳米棒层上的反射金属层组成的纳米棒层。

公开(公告)号：US20150207026A1

公开(公告)日：2015-07-23

申请号：US14490438

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Seung Woo CHOI ,  Sung Tae KIM ,  Young Min PARK ,  Eun Deok SIM ,  Sung Pyo LEE

IPC: H01L33/00 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L21/76251 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Abstract translation: 制造半导体发光器件的方法包括在第一衬底上形成包括有源层的发光结构层。 第二衬底在高于室温的第一温度下结合到发光结构层。 在高于室温的第二温度下，将第一衬底从发光结构层去除。 将第二基板和发光结构冷却至室温。 第二基板的热膨胀系数与有源层的热膨胀系数不同。