公开(公告)号：US20210399003A1

公开(公告)日：2021-12-23

申请号：US17149967

申请日：2021-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donghyun SHIN ,  Minkyu KANG ,  Seorim MOON ,  Seunggi MIN ,  Sungmin PARK ,  Jongmin LEE

IPC: H01L27/11573 ,  H01L23/535 ,  H01L27/11582 ,  H01L21/768

Abstract: A three-dimensional semiconductor memory device includes a peripheral circuit structure, a cell array structure above the peripheral circuit structure, and peripheral contact via structures connecting the cell array structure to the peripheral circuit structure, the peripheral contact via structures including a first peripheral contact via structure in a first through region in the peripheral circuit structure, and a second peripheral contact via structure in a second through region in the peripheral circuit structure, the second through region being spaced apart from the first through region above the peripheral circuit structure, and a difference between a second critical dimension of the second peripheral contact via structure and a first critical dimension of the first peripheral contact via structure being differently configured according to material layers included in the second through region and the first through region.

公开(公告)号：US20230189524A1

公开(公告)日：2023-06-15

申请号：US17884853

申请日：2022-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Gu KANG ,  Sang Don ZOO ,  Joon Sung KIM ,  Junghwan PARK ,  Seorim MOON ,  Seok Cheon BAEK ,  Cheol RYOU ,  Sun Young LEE ,  Cheol-Min LIM

IPC: H01L27/11582 ,  H01L23/535

CPC classification number: H01L27/11582 ,  H01L23/535

Abstract: A semiconductor memory device may include a substrate including a first and a second block region, and a stacked structure including insulating films and gate electrodes alternately stacked on the substrate. A vertical channel structure, a word line cut structure, and a block cut structure may penetrate the stacked structure. The word line cut structure may extend in a second direction. The block cut structure may extend in a first direction, connect to the word line cut structure, and define the first and second block regions. The block cut structure may include a first portion connected to the word line cut structure and a second portion connected to the first portion. From a planar viewpoint, the first portion may include at least a part not overlapping the second portion in the first direction and at least a region not overlapping the word line cut structure in the first direction.