公开(公告)号：US20190027539A1

公开(公告)日：2019-01-24

申请号：US15851763

申请日：2017-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa KIM ,  Sejung PARK ,  Junghun KIM ,  Sangsu PARK ,  Kyungrae BYUN ,  Beom Suk LEE

IPC: H01L27/30 ,  H01L51/44

Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

公开(公告)号：US20240162309A1

公开(公告)日：2024-05-16

申请号：US18135530

申请日：2023-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung YANG ,  Myunghoon JUNG ,  Seungmin SONG ,  Seungchan YUN ,  Sejung PARK ,  Kang-ill SEO

IPC: H01L29/417 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L29/41733 ,  H01L21/8221 ,  H01L21/823871 ,  H01L27/0922 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775

Abstract: Provided is a three-dimensional field-effect transistor (3DSFET) device including: a 1st source/drain region on a substrate, and a 2nd source/drain region on the 1st source/drain region; and a 1st source/drain contact structure on the 1st source/drain region, and a 2nd source/drain contact structure on the 2nd source/drain region, wherein the 2nd source/drain region is isolated from the 1st source/drain region through an interlayer structure, and wherein a spacer is formed at an upper portion of a sidewall of the 2nd source/drain contact structure, between the 1st source/drain contact structure and the 2nd source/drain contact structure.