公开(公告)号：US20190027539A1

公开(公告)日：2019-01-24

申请号：US15851763

申请日：2017-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhwa KIM ,  Sejung PARK ,  Junghun KIM ,  Sangsu PARK ,  Kyungrae BYUN ,  Beom Suk LEE

IPC: H01L27/30 ,  H01L51/44

Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.

公开(公告)号：US20240105745A1

公开(公告)日：2024-03-28

申请号：US18241478

申请日：2023-09-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongchan KIM ,  Chanho PARK ,  Hongkyu PARK ,  Byoungho KWON ,  Kyungrae BYUN ,  Minhwan JEON ,  Hwiyoung JEONG

IPC: H01L27/146

CPC classification number: H01L27/14625 ,  H01L27/14621

Abstract: Provided is an image sensor including a sensor substrate, a spacer layer on the sensor substrate, and a color separating lens array on the spacer layer and configured to separate light based on a wavelength of the light, wherein the color separating lens array includes a first lens layer including a plurality of first nano posts and a first peripheral material layer around the plurality of first nano posts, a chemical mechanical polishing (CMP) stop layer on the first peripheral material layer, an etch stop layer on an upper surface of the CMP stop layer and directly on an upper surface of each first nano post of the plurality of first nano posts, and a second lens layer on the etch stop layer, the second lens layer including a plurality of second nano posts and a second peripheral material layer around the plurality of second nano posts.