公开(公告)号：US20240304661A1

公开(公告)日：2024-09-12

申请号：US18598552

申请日：2024-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gina Lee ,  Seil Oh ,  Inseok Baek ,  Changsik Yoo

IPC: H10B12/00

CPC classification number: H01L28/90 ,  H10B12/30 ,  H10B12/50

Abstract: An integrated circuit device includes a substrate including a cell array region and a peripheral circuit region, a first ion implantation region located in an upper portion of the substrate in the peripheral circuit region, the first ion implantation region having a plurality of line trenches that extend in a first horizontal direction and cross the first ion implantation region, a plurality of lower capacitor dielectric films with each lower capacitor dielectric film configured to respectively cover inner walls of a respective line trench, a plurality of buried conductive lines that each partially fill a respective line trench and that are each respectively disposed on a respective lower capacitor dielectric film, a plurality of first lower capacitor contacts that are each in contact with a respective buried conductive line, and a plurality of second lower capacitor contacts that are in contact with the first ion implantation region.

公开(公告)号：US11749614B2

公开(公告)日：2023-09-05

申请号：US17340445

申请日：2021-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongyeop Kim ,  Seil Oh ,  Eunji Kim ,  Kwangwuk Park ,  Jihak Yu

IPC: H01L23/544 ,  H01L25/065 ,  H01L23/48

CPC classification number: H01L23/544 ,  H01L23/481 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2225/06593

Abstract: A through-silicon via (TSV) key for overlay measurement includes: a first TSV extending through at least a portion of a substrate in a first direction that is perpendicular to a top surface of the substrate; and at least one ring pattern, which is apart from and surrounds the first TSV in a second direction that is parallel to the top surface of the substrate, the at least one ring pattern being arranged in a layer that is lower than a top surface of the first TSV in the first direction, wherein an inner measurement point corresponds to the first TSV, an outer measurement point corresponds to the at least one ring pattern, and the inner measurement point and the outer measurement point are arranged to provide an overlay measurement of a TSV.