公开(公告)号：US20190333754A1

公开(公告)日：2019-10-31

申请号：US16217339

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Minjae Kang ,  Se-Yeon Kim ,  Teawon Kim ,  Yong-Suk Tak ,  Sunjung Kim

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/165 ,  C23C16/36 ,  C23C16/455

Abstract: A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.

公开(公告)号：US10861695B2

公开(公告)日：2020-12-08

申请号：US16217339

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunyoung Lee ,  Minjae Kang ,  Se-Yeon Kim ,  Teawon Kim ,  Yong-Suk Tak ,  Sunjung Kim

IPC: H01L21/00 ,  H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  H01L21/28 ,  H01L29/165 ,  H01L29/49 ,  H01L29/66

Abstract: A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.

公开(公告)号：US20140209243A1

公开(公告)日：2014-07-31

申请号：US14163208

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se-Yeon Kim ,  Kyung Hwan Jeong

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/3266 ,  H01J37/32697

Abstract: A plasma equipment includes a chamber, a shower head disposed in an upper part of an inner space of the chamber for discharging a cleaning gas into the chamber, a plasma generator for generating a plasma gas from the cleaning gas, a lower electrode disposed in a lower part of the inner space of the chamber, a chuck covering the lower electrode, and a field inducing unit disposed outside the chamber for inducing an electric field or a magnetic field within the chamber in a direction parallel to top surfaces of the chuck and the lower electrode. The field inducing unit concentrates the plasma gas on an inner sidewall of the chamber and protects the chuck from the plasma gas.

Abstract translation: 等离子体设备包括：室，设置在室的内部空间的上部的淋浴喷头，用于将清洁气体排放到室中;等离子体发生器，用于从清洁气体产生等离子体气体;下电极， 室的内部空间的下部，覆盖下部电极的卡盘以及设置在腔室外部的场诱导单元，用于在平行于卡盘的顶面的方向上感应腔室内的电场或磁场， 下电极。 场诱导单元将等离子体气体集中在室的内侧壁上，并保护卡盘免受等离子体气体的影响。