公开(公告)号：US20190165088A1

公开(公告)日：2019-05-30

申请号：US16003675

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-ho CHO ,  Sang-yeol KANG ,  Sun-min MOON ,  Young-lim PARK ,  Jong-born SEO

IPC: H01L49/02 ,  H01L29/06 ,  H01L21/02

Abstract: A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.

公开(公告)号：US20210202693A1

公开(公告)日：2021-07-01

申请号：US17200081

申请日：2021-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Sang-yeol KANG ,  Youn-soo KIM ,  Jin-su LEE ,  Hyung-suk JUNG ,  Kyu-ho CHO

IPC: H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/285 ,  H01L21/321 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

公开(公告)号：US20200058731A1

公开(公告)日：2020-02-20

申请号：US16539454

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-sik MUN ,  Sang-yeol KANG ,  Eun-sun KIM ,  Young-lim PARK ,  Kyoo-ho JUNG ,  Kyu-ho CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a lower electrode on a substrate, a dielectric layer structure on the lower electrode and including hafnium oxide having a tetragonal crystal phase, a template layer on the dielectric layer structure and including niobium oxide (NbOx, 0.5≤x≤2.5), and an upper electrode structure including a first upper electrode and a second upper electrode on the template layer.