公开(公告)号：US20200058731A1

公开(公告)日：2020-02-20

申请号：US16539454

申请日：2019-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo-sik MUN ,  Sang-yeol KANG ,  Eun-sun KIM ,  Young-lim PARK ,  Kyoo-ho JUNG ,  Kyu-ho CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device includes a lower electrode on a substrate, a dielectric layer structure on the lower electrode and including hafnium oxide having a tetragonal crystal phase, a template layer on the dielectric layer structure and including niobium oxide (NbOx, 0.5≤x≤2.5), and an upper electrode structure including a first upper electrode and a second upper electrode on the template layer.