公开(公告)号：US08877562B2

公开(公告)日：2014-11-04

申请号：US14253478

申请日：2014-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

IPC: H01L33/36 ,  H01L33/38

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

公开(公告)号：US09705040B2

公开(公告)日：2017-07-11

申请号：US14939817

申请日：2015-11-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-hoon Ha ,  Sang-yeob Song ,  Gi-bum Kim ,  Jae-in Sim ,  Seung-woo Choi

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

公开(公告)号：US09660163B2

公开(公告)日：2017-05-23

申请号：US14736217

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US10038127B2

公开(公告)日：2018-07-31

申请号：US15493883

申请日：2017-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US09263652B2

公开(公告)日：2016-02-16

申请号：US14154312

申请日：2014-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-heon Yoon ,  Gi-bum Kim ,  Sang-yeon Kim ,  Sang-yeob Song ,  Won-goo Hur

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/40 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/13

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract translation: 半导体发光器件包括具有发光结构的半导体区域，形成在半导体区域上的电极层，以及反射保护结构，其延伸暴露电极层的上表面并覆盖与电极层相邻的半导体区域 。