公开(公告)号：US09142724B2

公开(公告)日：2015-09-22

申请号：US13973720

申请日：2013-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-sub Kim ,  Jin-sub Lee ,  Cheol-soo Sone ,  Kyung-wook Hwang

IPC: H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/38 ,  H01L33/405

Abstract: A nitride-based semiconductor light-emitting device includes an n-type nitride-based semiconductor layer, an active layer, a p-type nitride-based semiconductor layer, an ohmic contact layer covering a portion of the p-type nitride-based semiconductor layer upper surface, and a p electrode including a first portion contacting the p-type nitride-based semiconductor layer and a second portion contacting the ohmic contact layer.

Abstract translation: 氮化物系半导体发光元件包括n型氮化物系半导体层，有源层，p型氮化物系半导体层，覆盖p型氮化物系半导体的一部分的欧姆接触层 以及包括与p型氮化物类半导体层接触的第一部分和与欧姆接触层接触的第二部分的p电极。

公开(公告)号：US20130307001A1

公开(公告)日：2013-11-21

申请号：US13844730

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-sub Lee ,  Jung-sub Kim ,  Cheol-soo Sone

IPC: H01L33/12

CPC classification number: H01L33/12 ,  H01L33/325

Abstract: An n-type aluminum gallium nitride (AlGaN) thin film and an ultraviolet light emitting device including the same. The ultraviolet light emitting device includes: an aluminum nitride (AlN) buffer layer on a substrate; and an n-type AlGaN layer, an active layer, a p-type AlGaN layer that are sequentially stacked on the AlN buffer layer. A silicon doping density of the n-type AlGaN layer increases with respect to an increasing vertical position of the n-AlGaN layer with reference to the AlN buffer layer.

Abstract translation: 一种n型氮化镓铝（AlGaN）薄膜和包括其的紫外线发射装置。 紫外光发射装置包括：衬底上的氮化铝（AlN）缓冲层; 以及依次层叠在AlN缓冲层上的n型AlGaN层，有源层，p型AlGaN层。 参照AlN缓冲层，n型AlGaN层的硅掺杂密度相对于n-AlGaN层的垂直位置增加而增加。

公开(公告)号：US08877562B2

公开(公告)日：2014-11-04

申请号：US14253478

申请日：2014-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

IPC: H01L33/36 ,  H01L33/38

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract translation: LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

公开(公告)号：US10038127B2

公开(公告)日：2018-07-31

申请号：US15493883

申请日：2017-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

公开(公告)号：US20130319333A1

公开(公告)日：2013-12-05

申请号：US13909466

申请日：2013-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-sub Lee ,  Min-seok Kim ,  Jung-sub Kim ,  Cheol-soo Sone

IPC: C23C16/455 ,  B05B1/00

CPC classification number: C23C16/455 ,  B05B1/005 ,  C23C16/45508 ,  C23C16/45574

Abstract: An injector and a material layer deposition chamber including the same. An injector includes: a plurality of independent sections; and a gas inlet and a gas outlet that are provided in each of the plurality of independent sections, wherein gas outlets provided in two adjacent sections are positioned and configured to inject gas in a limited and different direction relative to each other.

Abstract translation: 一种喷射器和包括该喷射器的材料层沉积室。 喷射器包括：多个独立部分; 以及设置在所述多个独立部分中的每一个中的气体入口和气体出口，其中设置在两个相邻部分中的气体出口被定位和构造成相对于彼此在有限且不同的方向上喷射气体。

公开(公告)号：US09660163B2

公开(公告)日：2017-05-23

申请号：US14736217

申请日：2015-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-in Yang ,  Tae-hyung Kim ,  Si-hyuk Lee ,  Sang-yeob Song ,  Cheol-soo Sone ,  Hak-hwan Kim ,  Jin-hyun Lee

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.