公开(公告)号：US20200227519A1

公开(公告)日：2020-07-16

申请号：US16545906

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-bin SONG ,  Hei-seung KIM ,  Mirco CANTORO ,  Sang-woo LEE ,  Min-hee CHO ,  Beom-yong HWANG

IPC: H01L29/06 ,  H01L29/22 ,  H01L29/786

Abstract: A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.

公开(公告)号：US20180220279A1

公开(公告)日：2018-08-02

申请号：US15885136

申请日：2018-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ho-yong JUNG ,  Jong-won KIM ,  Hong-uk WOO ,  Sang-woo LEE

IPC: H04W4/38 ,  H04L12/28 ,  G06F9/54

Abstract: A server for and a method of providing sensing data to at least one electronic device is provided. The server includes a communication interface, a memory, and at least one processor, wherein the at least one processor executes the at least one instruction to receive, from a first electronic device, a first template including information about a type of sensing data required by the first electronic device and a format of the sensing data, receive a request for the sensing data from the first electronic device, select the requested sensing data from among pieces of sensing data received from at least one second electronic device, based on the received first template, in response to the request, convert the selected sensing data, based on the first template, to obtain converted sensing data, and provide a response message including the converted sensing data to the first electronic device.