公开(公告)号：US20200227519A1

公开(公告)日：2020-07-16

申请号：US16545906

申请日：2019-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-bin SONG ,  Hei-seung KIM ,  Mirco CANTORO ,  Sang-woo LEE ,  Min-hee CHO ,  Beom-yong HWANG

IPC: H01L29/06 ,  H01L29/22 ,  H01L29/786

Abstract: A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.