公开(公告)号：US20190139796A1

公开(公告)日：2019-05-09

申请号：US15956192

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-kil LEE ,  Sung-yoon RYU ,  Hyun LEE ,  Yu-sin YANG ,  Q-han PARK

IPC: H01L21/67 ,  H01L21/66

Abstract: An apparatus for manufacturing a semiconductor device is provided. The apparatus for manufacturing a semiconductor device may include a mass flow controller configured to control a flow of a process gas supplied to a process chamber, the mass flow controller configured to adjust an outflow rate of the process gas exiting the mass flow controller in response to a correction signal, the correction signal generated based on a difference between an inflow rate of the process gas flowing into the mass flow controller and a reference flow rate, a sensor configured to measure a chamber pressure inside the process chamber, an exhaust valve configured to adjust an exhaust speed of an exhaust gas exhausted from the process chamber; and a monitoring apparatus configured to detect a defect of the mass flow controller based on the correction signal, the chamber pressure, and the exhaust speed of the exhaust valve.

公开(公告)号：US20160033550A1

公开(公告)日：2016-02-04

申请号：US14694115

申请日：2015-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-woo KIM ,  Woo-seok KO ,  Young-hwan KIM ,  Jeong-hoi KIM ,  Baek-man SUNG ,  Hyung-su SON ,  Chae-ho SHIN ,  Yu-sin YANG ,  Jae-youn WI ,  Sang-kil LEE ,  Chung-sam JUN

IPC: G01Q60/40

CPC classification number: G01Q60/40 ,  G01Q70/06

Abstract: A conductive atomic force microscope including a plurality of probe structures each including a probe and a cantilever connected thereto, a power supplier applying a bias voltage, a current detector detecting a first current flowing between a sample object and each of the probes and a second current flowing between a measurement object and each of the probes, and calculating representative currents for the sample and measurement objects based on the first and second currents, respectively, and a controller calculating a ratio between representative currents of the sample object measured by each of the probe structures, calculating a scaling factor for scaling the representative current with respect to the measurement object measured by each of the probes, and determine a reproducible current measurement value based on the second measurement current and the scaling factor may be provided.

Abstract translation: 一种导电原子力显微镜，包括多个探针结构，每个探针结构包括探针和连接到其上的悬臂，施加偏置电压的电源，检测在样品物体和每个探针之间流动的第一电流的电流检测器和第二电流 在测量对象和每个探针之间流动，并且基于第一和第二电流分别计算样本和测量对象的代表性电流，以及控制器，计算由每个探针测量的样本对象的代表性电流之间的比率 计算相对于由每个探针测量的测量对象的代表性电流的缩放因子，并且可以提供基于第二测量电流和缩放因子来确定可重现的电流测量值。

公开(公告)号：US20130301903A1

公开(公告)日：2013-11-14

申请号：US13785307

申请日：2013-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-hoon SOHN ,  Yu-sin YANG ,  Sang-kil LEE

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.

Abstract translation: 一种检查晶片的方法包括在晶片上执行制造工艺，在晶片上照射宽带光，使得光从晶片反射，通过使用从晶片反射的光产生光谱立方体， 来自光谱立方体的期望晶片检查区域，并且通过分析所提取的光谱来检查期望的晶片检查区域。