公开(公告)号：US20170192052A1

公开(公告)日：2017-07-06

申请号：US15283466

申请日：2016-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-hoon SOHN ,  Chung-sam JUN ,  Yu-sin YANG

IPC: G01R31/302 ,  G01R31/28

CPC classification number: G01R31/307

Abstract: Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.

公开(公告)号：US20130301903A1

公开(公告)日：2013-11-14

申请号：US13785307

申请日：2013-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-hoon SOHN ,  Yu-sin YANG ,  Sang-kil LEE

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.

Abstract translation: 一种检查晶片的方法包括在晶片上执行制造工艺，在晶片上照射宽带光，使得光从晶片反射，通过使用从晶片反射的光产生光谱立方体， 来自光谱立方体的期望晶片检查区域，并且通过分析所提取的光谱来检查期望的晶片检查区域。