公开(公告)号：US09105581B2

公开(公告)日：2015-08-11

申请号：US14297024

申请日：2014-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sam Hyung-sam Kim ,  Gon-Jun Kim ,  Volynets Vladmir ,  Yong-Kyun Park ,  In-Cheol Song ,  Sang-Heon Lee ,  Sang-Jean Jeon

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/32136 ,  H01L21/6719

Abstract: In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.

Abstract translation: 在处理衬底的方法中，可以从第一反应气体产生第一等离子体。 可以从第二反应气体产生第二等离子体。 第一等离子体和第二等离子体可以单独地施加到基底。 因此，至少两个远程等离子体源中的每一个可以在不同的工艺配方下产生至少两个等离子体，其可以被优化用于处理衬底。 结果，使用最佳等离子体处理的衬底可以具有期望的形状。

公开(公告)号：US20150206716A1

公开(公告)日：2015-07-23

申请号：US14601878

申请日：2015-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNGJOON KIM ,  Vasily Pashkovskiy ,  Sang-Heon Lee ,  Sang-Jean Jeon ,  Doug-Yong Sung ,  Yun-Kwang Jeon ,  Bong-Seong Kim

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/505

CPC classification number: H01J37/32146 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.

Abstract translation: 等离子体发生装置包括：室，其包围与外部隔离的反应空间; 设置在所述室的下部的晶片卡盘; 设置在所述室的上部的等离子体产生单元; 向所述等离子体发生单元提供RF功率的第一射频（RF）电源; 介于所述第一RF电源和所述等离子体产生单元之间的第一匹配单元; 向晶片卡盘提供RF功率的第二RF电源; 以及插入在第二RF电源和晶片卡盘之间的第二匹配单元。 第一RF电源在不同时间提供第一脉冲功率电平和不同的第二脉冲功率电平。