Invention Grant
- Patent Title: Method of processing a substrate and apparatus for performing the same
- Patent Title (中): 基板的处理方法及其制造方法
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Application No.: US14297024Application Date: 2014-06-05
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Publication No.: US09105581B2Publication Date: 2015-08-11
- Inventor: Sam Hyung-sam Kim , Gon-Jun Kim , Volynets Vladmir , Yong-Kyun Park , In-Cheol Song , Sang-Heon Lee , Sang-Jean Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, PA
- Priority: KR10-2013-0150053 20131204
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/67 ; H01L21/3213

Abstract:
In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.
Public/Granted literature
- US20150155178A1 METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME Public/Granted day:2015-06-04
Information query
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