公开(公告)号：US20250155790A1

公开(公告)日：2025-05-15

申请号：US18663227

申请日：2024-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimin LIM ,  Sang-Hyeon LEE ,  Hoil KI

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/74

Abstract: A photomask includes a mask substrate. A reflective layer is disposed on a first surface of the mask substrate. A capping layer is disposed on the reflective layer. An absorber layer pattern is disposed on the capping layer. The absorber layer pattern defines an opening that light sources of extreme ultraviolet wavelengths pass through. A side wall of the absorber layer pattern exposed by the opening includes an inclined surface on an upper portion disposed away from the capping layer and a curved surface on a lower portion adjacent to the capping layer.

公开(公告)号：US20160056268A1

公开(公告)日：2016-02-25

申请号：US14638864

申请日：2015-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hock-Chun CHIN ,  Nak-Jin SON ,  Sang-Hyeon LEE

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L29/7847 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device improving the process speed is provided. The method includes forming a fin on a substrate, forming a gate electrode on the fin, first ion-implanting a first impurity to amorphize a region including portions of the fin positioned at opposite sides of the gate electrode, forming a stress inducing layer on the substrate and the fin, and annealing the substrate to recrystallize the amorphized region, wherein after the forming of the fin and before the annealing, the method further includes second ion-implanting a second impurity different from the first impurity into the fin.

Abstract translation: 提供了一种制造提高处理速度的半导体器件的方法。 该方法包括在衬底上形成翅片，在翅片上形成栅电极，首先离子注入第一杂质以使包括位于栅电极相对侧的翅片部分的区域非晶化，在该栅极上形成应力诱导层 衬底和鳍片，并且退火衬底以使非晶化区域重结晶，其中在形成鳍片之后并且在退火之前，该方法还包括将不同于第一杂质的第二杂质离子注入到鳍中。

公开(公告)号：US20150107617A1

公开(公告)日：2015-04-23

申请号：US14285771

申请日：2014-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Hyeon LEE ,  Hwa-Sung KIM

IPC: G03F1/82 ,  B08B7/00

CPC classification number: G03F1/82 ,  B08B7/0035

Abstract: A method of cleaning a photomask, the method including placing the photomask in a chamber, the photomask including a mask substrate and a reflective layer, a capping layer, and a light absorbing layer pattern stacked on the mask substrate, and wherein the photomask has contaminants thereon; supplying a gas into the chamber such that the gas does not react with the capping layer or reacts with the capping layer to form an anti-oxidant layer; ionizing the gas by irradiating an inside of the chamber with an energy beam such that the contaminants react with the ionized gas to be converted to a by-product; and removing the by-product from the chamber.

Abstract translation: 一种清洁光掩模的方法，所述方法包括将光掩模放置在室中，所述光掩模包括掩模基板和反射层，覆盖层和层叠在掩模基板上的光吸收层图案，并且其中光掩模具有污染物 上; 将气体供应到所述室中，使得所述气体不与所述封盖层反应或与所述封盖层反应以形成抗氧化剂层; 通过用能量束照射室的内部来使气体电离，使得污染物与电离气体反应以转化成副产物; 并从室中除去副产物。