PHOTOMASK FOR EXTREME ULTRAVIOLET LITHOGRAPHY AND REPAIR METHOD THEREOF

    公开(公告)号:US20250155790A1

    公开(公告)日:2025-05-15

    申请号:US18663227

    申请日:2024-05-14

    Abstract: A photomask includes a mask substrate. A reflective layer is disposed on a first surface of the mask substrate. A capping layer is disposed on the reflective layer. An absorber layer pattern is disposed on the capping layer. The absorber layer pattern defines an opening that light sources of extreme ultraviolet wavelengths pass through. A side wall of the absorber layer pattern exposed by the opening includes an inclined surface on an upper portion disposed away from the capping layer and a curved surface on a lower portion adjacent to the capping layer.

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