公开(公告)号：US20140104452A1

公开(公告)日：2014-04-17

申请号：US13828591

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jae Jin JUNG ,  Young Gu JIN

IPC: H01L31/02 ,  H01L27/146 ,  H04N5/232

CPC classification number: H01L31/02016 ,  H01L27/14609 ,  H04N5/23229 ,  H04N5/378

Abstract: A sub pixel includes a photodetector and a column line output circuit. The photodetector is configured to output an electrical signal based on a detected amount of photons. The column line output circuit is configured to generate an output signal based on the electrical signal. The output signal is one of a current from a current source and a comparison signal indicative of binary output data.

Abstract translation: 子像素包括光电检测器和列线输出电路。 光电检测器被配置为基于检测到的光子量输出电信号。 列线输出电路被配置为基于电信号产生输出信号。 输出信号是来自电流源的电流和表示二进制输出数据的比较信号之一。

公开(公告)号：US20150156437A1

公开(公告)日：2015-06-04

申请号：US14579857

申请日：2014-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Chul SUL ,  Hirosige GOTO ,  Kyung Ho LEE

IPC: H04N5/3745 ,  H04N5/378

CPC classification number: H04N5/3745 ,  H01L27/307 ,  H04N5/3591 ,  H04N5/378

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.

Abstract translation: 提供了图像传感器和图像感测方法。 图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。 由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

公开(公告)号：US20160035794A1

公开(公告)日：2016-02-04

申请号：US14812264

申请日：2015-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yun Jeong KIM ,  Sang Chul SUL ,  Chung Kun SONG ,  Myung Won LEE ,  Tae Yon LEE ,  Gi Seong RYU ,  Seung Hyeon JEONG ,  Chang Min JEONG ,  Hyun Ji JO

IPC: H01L27/30 ,  H04N5/225 ,  G01J1/44 ,  H04N5/378 ,  H01L51/42 ,  H01L51/44

CPC classification number: H01L27/307 ,  G01J1/44 ,  G01J2001/446 ,  H01L51/424 ,  H01L51/428 ,  H01L51/441 ,  H04N5/378 ,  Y02E10/549

Abstract: A photocharge storage element includes a gate insulator formed on a gate electrode, a channel formed on the gate insulator between a source electrode and a drain electrode, and an organic photoelectric conversion element formed on the channel. The organic photoelectric conversion element generates photocharges in response to light. The channel accumulates the photocharges generated by the organic photoelectric conversion element. The photocharges accumulated in the channel are read out from the channel in response to a voltage between the source electrode and the drain electrode.

Abstract translation: 光电荷存储元件包括形成在栅电极上的栅极绝缘体，形成在源电极和漏极之间的栅绝缘体上的沟道和形成在沟道上的有机光电转换元件。 有机光电转换元件响应于光而产生光电荷。 该通道累积由有机光电转换元件产生的光电荷。 响应于源电极和漏电极之间的电压，从沟道中读出累积在通道中的光电荷。

公开(公告)号：US20140104473A1

公开(公告)日：2014-04-17

申请号：US14051993

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Chan KIM ,  Min Ho KIM ,  Dong Ki MIN ,  Sang Chul SUL ,  Tae Seok OH ,  Kwang Hyun LEE ,  Tae Yon LEE ,  Jung Hoon JUNG ,  Young Gu JIN

IPC: H04N5/374

CPC classification number: H04N5/374 ,  H01L27/14627 ,  H01L27/14634

Abstract: An image sensor chip includes a first wafer and a second wafer. The first wafer includes an image sensor having a plurality of sub-pixels, each of which is configured to detect at least one photon and output a sub-pixel signal according to a result of the detection. The image processor is configured to process sub-pixel signals for each sub-pixel and generate image data. The first wafer and the second wafer are formed in a wafer stack structure.

Abstract translation: 图像传感器芯片包括第一晶片和第二晶片。 第一晶片包括具有多个子像素的图像传感器，每个子像素被配置为检测至少一个光子并根据检测结果输出子像素信号。 图像处理器被配置为处理每个子像素的子像素信号并生成图像数据。 第一晶片和第二晶片形成为晶片堆叠结构。

公开(公告)号：US20150372036A1

公开(公告)日：2015-12-24

申请号：US14744802

申请日：2015-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Dong SUH ,  Masaru ISHII ,  Sung Young YUN ,  Sang Chul SUL ,  Yong Wan JIN

IPC: H01L27/146 ,  H04N9/04

CPC classification number: H01L27/14621 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14665 ,  H01L27/307

Abstract: An image sensor is provided. The image sensor includes a first photoelectric conversion element and a second photoelectric conversion element, which are formed in a semiconductor substrate; a red color filter formed on the first photoelectric conversion element; a cyan color filter formed on the second photoelectric conversion element; and an organic photoelectric conversion layer formed on the red color filter and the cyan color filter, the organic photoelectric conversion layer configured to absorb wavelengths in a green range.

Abstract translation: 提供图像传感器。 图像传感器包括形成在半导体衬底中的第一光电转换元件和第二光电转换元件; 形成在第一光电转换元件上的红色滤色器; 形成在第二光电转换元件上的青色滤色器; 以及形成在所述红色滤色器和所述青色滤色器上的有机光电转换层，所述有机光电转换层被配置为吸收绿色范围的波长。