公开(公告)号：US20230214990A1

公开(公告)日：2023-07-06

申请号：US17900334

申请日：2022-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Cheol KANG ,  SOORYONG LEE ,  KYEN-HEE LEE

IPC: G06T7/00 ,  G06T7/30 ,  G06T11/00

CPC classification number: G06T7/001 ,  G06T7/30 ,  G06T11/00 ,  G06T2207/30148 ,  G06T2207/20084 ,  G06T2207/10061

Abstract: Disclosed is a semiconductor integrated circuit fabricating method of a semiconductor fabricating device which includes a processor executing a defect detection module includes receiving, at the defect detection module, a first capture image of the semiconductor integrated circuit and a first layout image, generating, at the defect detection module, a second layout image from the first capture image, generating, at the defect detection module, a contour image from the first capture image and the second layout image, detecting, at the defect detection module, a defect of the semiconductor integrated circuit based on the first layout image and the contour image, analyzing, at the semiconductor fabricating device, a correlation between a kind of the defect and process variations of the semiconductor integrated circuit, and changing, at the semiconductor fabricating device, at least one process variation having a correlation with the defect from among the process variations.

公开(公告)号：US20190155169A1

公开(公告)日：2019-05-23

申请号：US16030061

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yong MOON ,  SOORYONG LEE ,  CHANGHWAN KIM

IPC: G03F7/20

Abstract: A method for correcting a mask layout includes providing a mask layout including first patterns, each of the first patterns having a size related to a first critical dimension (CD) value, obtaining topography data on a region of a wafer, generating a defocus map using the topography data, and correcting the mask layout on the basis of the defocus map. The generating of the defocus map includes respectively setting second CD values for a plurality of sub-regions of the mask layout. The second CD values may be set based on the topography data. The correcting of the mask layout on the basis of the defocus map comprises correcting the sizes of the first patterns to be related to the second CD values.