公开(公告)号：US20210111044A1

公开(公告)日：2021-04-15

申请号：US17035023

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWAN KIM ,  Toshihiro Iizuka ,  Kenichi Nagayawa ,  Takafumi Noguchi

IPC: H01L21/67 ,  B05D1/12 ,  B05C15/00

Abstract: A member includes a base material structure and a surface layer on the base material structure. The surface layer includes a particle that includes Y—O—F. The base material structure includes interface layers in contact with the surface layer. The interface layers of the base material structure include fluorine.

公开(公告)号：US20190155169A1

公开(公告)日：2019-05-23

申请号：US16030061

申请日：2018-07-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Yong MOON ,  SOORYONG LEE ,  CHANGHWAN KIM

IPC: G03F7/20

Abstract: A method for correcting a mask layout includes providing a mask layout including first patterns, each of the first patterns having a size related to a first critical dimension (CD) value, obtaining topography data on a region of a wafer, generating a defocus map using the topography data, and correcting the mask layout on the basis of the defocus map. The generating of the defocus map includes respectively setting second CD values for a plurality of sub-regions of the mask layout. The second CD values may be set based on the topography data. The correcting of the mask layout on the basis of the defocus map comprises correcting the sizes of the first patterns to be related to the second CD values.