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    Photolithography patterning system using feature parameters
    1.
    发明授权
    Photolithography patterning system using feature parameters 有权
    光刻图案化系统采用特征参数

    公开(公告)号：US09529960B2

    公开(公告)日：2016-12-27

    申请号：US14679710

    申请日：2015-04-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin Choi ,  Heung-suk Oh ,  Sin-jeung Park ,  Rae-won Yi

    IPC: G06F17/50 ,  H01L21/308 ,  G03F1/00 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F7/70433 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/308

    Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.

    Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。 弱特征的第一区域可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。

    METHODS OF PROVIDING PHOTOLITHOGRAPHY PATTERNS USING FEATURE PARAMETERS, SYSTEMS AND COMPUTER PROGRAM PRODUCTS IMPLEMENTING THE SAME
    2.
    发明申请
    METHODS OF PROVIDING PHOTOLITHOGRAPHY PATTERNS USING FEATURE PARAMETERS, SYSTEMS AND COMPUTER PROGRAM PRODUCTS IMPLEMENTING THE SAME 审中-公开
    使用特征参数，系统和实现其的计算机程序产品提供光刻图案的方法

    公开(公告)号：US20150220679A1

    公开(公告)日：2015-08-06

    申请号：US14679710

    申请日：2015-04-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jin Choi ,  Heung-suk Oh ,  Sin-jeung Park ,  Rae-won Yi

    IPC: G06F17/50

    CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F7/70433 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/308

    Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter, A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.

    Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。第一区域 的弱特征可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。

    METHOD OF INSPECTING SURFACE AND METHOD OF INSPECTING PHOTOMASK USING THE SAME
    4.
    发明申请
    METHOD OF INSPECTING SURFACE AND METHOD OF INSPECTING PHOTOMASK USING THE SAME 有权
    检查表面的方法和使用其检查光电子的方法

    公开(公告)号：US20160356727A1

    公开(公告)日：2016-12-08

    申请号：US15093770

    申请日：2016-04-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji-hoon Na ,  Dong-gun Lee ,  Byung-gook Kim ,  Rae-won Yi

    IPC: G01N21/956 ,  G01B11/00

    CPC classification number: G01N21/956 ,  G01B11/00 ,  G01N2021/95676 ,  G01N2201/103 ,  G03F1/84

    Abstract: A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

    Abstract translation: 检查表面的方法包括将检查对象加载在被配置为产生光束阵列的多光束检查装置的台上，并且与所述光束阵列同时扫描所述检查对象的多个检查区域，其中， 第一检查区域小于由连接梁阵列的对应的四个相邻梁的各个中心的四边形形成的区域，并且一个第一检查区域的相邻区域不被光束阵列扫描。

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