公开(公告)号：US20240219824A1

公开(公告)日：2024-07-04

申请号：US18383543

申请日：2023-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AKIO MISAKA ,  NOYOUNG CHUNG ,  SEOKYUN JEONG

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768

CPC classification number: G03F1/24 ,  G03F1/54 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76817

Abstract: An extreme ultraviolet (EUV) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.

公开(公告)号：US20170329888A1

公开(公告)日：2017-11-16

申请号：US15433835

申请日：2017-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOUNGSEOK KIM ,  NOYOUNG CHUNG

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/36

Abstract: A method for manufacturing a semiconductor device includes obtaining a design layout for a target layer of an optical proximity correction process, the design layout including a first block and a second block being a repetition block of the first block, dividing the design layout into a plurality of patches, performing the optical proximity correction process on the patches of the first block, applying corrected patches of the first block to the patches of the second block, respectively, forming a correction layout by performing the optical proximity correction process on boundary patches of the second block, fabricating a photomask corresponding to the correction layout, and forming patterns on a substrate corresponding to the photomask. Each of the patches is a standard unit on which the optical proximity correction process is performed.

公开(公告)号：US20210063867A1

公开(公告)日：2021-03-04

申请号：US16845459

申请日：2020-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akio Misaka ,  NOYOUNG CHUNG ,  WOONHYUK CHOI

IPC: G03F1/36 ,  G06F30/392 ,  G06F30/398 ,  G06F30/3953 ,  G06F30/367

Abstract: A method of manufacturing a semiconductor device includes randomly placing a plurality of standard cells from a library in which the standard cells are pre-stored, designing an interconnection pattern in which the standard cells are connected randomly to each other, connecting the standard cells according to the interconnection pattern to generate a virtual layout, performing an optical proximity correction operation on the virtual layout using an optical proximity correction (OPC) model, and forming and verifying a mask corresponding to the virtual layout on which the optical proximity correction operation is performed.