公开(公告)号：US20240219824A1

公开(公告)日：2024-07-04

申请号：US18383543

申请日：2023-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： AKIO MISAKA ,  NOYOUNG CHUNG ,  SEOKYUN JEONG

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768

CPC classification number: G03F1/24 ,  G03F1/54 ,  H01L21/0274 ,  H01L21/31144 ,  H01L21/76817

Abstract: An extreme ultraviolet (EUV) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.