公开(公告)号：US12106942B2

公开(公告)日：2024-10-01

申请号：US17212666

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yi Rop Kim ,  Kui Hyun Yoon ,  Yun Hwan Kim ,  Moon Eon Lee ,  Seok Woo Lee ,  Dong Hee Han

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/68785 ,  C23C16/45565 ,  C23C16/466 ,  H01J37/32091 ,  H01J37/32183 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma process apparatus includes a chamber in which a plasma process is performed, an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a first electrode disposed inside the electrostatic chuck, a second electrode which is spaced apart from the first electrode inside the electrostatic chuck, surrounds the first electrode in a plane defined by the first direction and a second direction perpendicular to the first direction, and is disposed on the same plane as the first electrode, a power supply configured to apply a voltage to each of the first electrode and the second electrode, a plurality of cooling gas supply lines which penetrates the electrostatic chuck in a third direction perpendicular to the first and second directions and is configured to provide a cooling gas to the wafer.