公开(公告)号：US12106942B2

公开(公告)日：2024-10-01

申请号：US17212666

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yi Rop Kim ,  Kui Hyun Yoon ,  Yun Hwan Kim ,  Moon Eon Lee ,  Seok Woo Lee ,  Dong Hee Han

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32642 ,  C23C16/4586 ,  H01J37/32697 ,  H01J37/32724 ,  H01L21/68785 ,  C23C16/45565 ,  C23C16/466 ,  H01J37/32091 ,  H01J37/32183 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/6833

Abstract: A plasma process apparatus includes a chamber in which a plasma process is performed, an electrostatic chuck which supports a wafer inside the chamber and comprises a first portion and a second portion disposed on the first portion, a first electrode disposed inside the electrostatic chuck, a second electrode which is spaced apart from the first electrode inside the electrostatic chuck, surrounds the first electrode in a plane defined by the first direction and a second direction perpendicular to the first direction, and is disposed on the same plane as the first electrode, a power supply configured to apply a voltage to each of the first electrode and the second electrode, a plurality of cooling gas supply lines which penetrates the electrostatic chuck in a third direction perpendicular to the first and second directions and is configured to provide a cooling gas to the wafer.

公开(公告)号：US20220172926A1

公开(公告)日：2022-06-02

申请号：US17443535

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Beom Rae Kim ,  Dong Hyeon Na ,  Young Jin Noh ,  Seung Bo Shim ,  Sang-Ho Lee ,  Yong Woo Lee ,  Jun Ho Lee ,  Dong Hee Han

IPC: H01J37/32

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.