公开(公告)号：US20230126012A1

公开(公告)日：2023-04-27

申请号：US17866904

申请日：2022-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bong-Kil JUNG ,  Sang-Wan NAM ,  Jong Min BAEK ,  Min Ki JEON ,  Woo Chul JUNG ,  Yoon-Hee CHOI

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24

Abstract: Provided is a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a first voltage generator configured to generate a word line operating voltage for each word line of the memory cell array, a second voltage generator configured to generate a bit line operating voltage of the memory cell array, and a temperature unit configured to determine, from a temperature range table, a temperature range for a temperature code according to a real-time temperature of the memory cell array, and to adjust a power supply voltage of the first or second voltage generator based on a selection signal mapped to the determined temperature range.