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公开(公告)号:US20220392520A1
公开(公告)日:2022-12-08
申请号:US17569679
申请日:2022-01-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Daero KIM , Kyunghoi KOO , Sujeong KIM , Juyoung KIM , Sanghune PARK , Jiyeon PARK , Jihun OH , Kyoungwon LEE
IPC: G11C11/4096 , G11C11/4076
Abstract: A memory controller includes a first receiver configured to compare a read reference voltage with a piece of data received through a first data line and output a first piece of data; a first duty adjuster configured to adjust a duty of the first piece of data; a second receiver configured to compare the read reference voltage with a piece of data received through a second data line and output a second piece of data; a second duty adjuster configured to adjust a duty of the second piece of data; and a training circuit configured to perform a training operation on pieces of data received through a plurality of data lines, to obtain a target read reference voltage for each piece of data and correct a duty of each piece of data based on a level of the target read reference voltage for each piece of data.
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公开(公告)号:US20170222649A1
公开(公告)日:2017-08-03
申请号:US15392554
申请日:2016-12-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyunghoi KOO , Sanghune PARK , Jin-Ho CHOI
IPC: H03K19/0185 , G11C7/10
CPC classification number: H03K19/018521 , G11C7/10 , G11C7/1057 , H03K19/0013 , H03K19/00361 , H03K19/017509 , H03K19/017518 , H03K19/018528 , H03K19/018592 , H03K19/17744
Abstract: A transmitter circuit including a pre-driver circuit configured to receive a logic signal from a logic circuit and to generate a first signal driven by a first voltage, the pre-driver circuit including a transistor having a threshold voltage equal to or lower than a threshold voltage of a transistor included in the logic circuit, and a main-driver circuit configured to receive the first signal and generate a second signal driven by a second voltage, the main-driver circuit configured to output the second signal to an input/output pad, the main-driver circuit including a transistor having a threshold voltage which is equal to or lower than the threshold voltage of the transistor included in the logic circuit may be provided.
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