公开(公告)号：US20240102160A1

公开(公告)日：2024-03-28

申请号：US18461976

申请日：2023-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjun AHN ,  Byounghoon JI ,  Kyoungwoo HONG

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45527 ,  H01J37/32449 ,  H01L21/0228 ,  H10B43/27

Abstract: A method of depositing an atomic layer is provided. The method includes a plurality of deposition cycles. Each of the plurality of deposition cycles includes rotating a valve plate included in an exhaust port by a first angle while supplying a precursor to a chamber into which a substrate is loaded, rotating the valve plate by a second angle while supplying a purge gas to the chamber, rotating the valve plate by a third angle while supplying a reactor to the chamber, and rotating the valve plate by the second angle while supplying the purge gas to the chamber, and wherein the first angle, the second angle, and the third angle are certain angles between an upper surface of the valve plate and a virtual plane vertical to an internal path of the exhaust port, and the first angle differs from the third angle.