公开(公告)号：US20250124983A1

公开(公告)日：2025-04-17

申请号：US18637829

申请日：2024-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghoe Heo ,  Seongjin Kim ,  Sang-Wan Nam

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

Abstract: A memory device includes an array of nonvolatile memory cells and a wordline voltage generator configured to drive: a selected word line within the array with a program voltage, a word line extending immediately adjacent the selected word line with a first voltage during the program operation, and an unselected word line within the array with a second voltage having a magnitude less than a magnitude of the first voltage, during a memory cell program operation. A control block is provided, which drives the wordline voltage generator with a first internal power signal having a first magnitude, in response to a first external supply power signal, drives the wordline voltage generator with a second internal power signal having a second magnitude less than the first magnitude, and selectively redirects power from the first external supply power signal to the second internal power signal, in response to detecting a reduction in current and/or voltage associated with the second external power signal that exceeds a threshold amount.