公开(公告)号：US20160034348A1

公开(公告)日：2016-02-04

申请号：US14636548

申请日：2015-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-wook PARK ,  Ki-won PARK

IPC: G06F11/10 ,  G11C29/52 ,  G11C16/04

CPC classification number: G11C29/52 ,  G06F11/1048 ,  G11C11/406 ,  G11C16/0466 ,  G11C29/42 ,  G11C29/44 ,  G11C29/50016 ,  G11C29/783 ,  G11C2211/4062

Abstract: A semiconductor memory device having a selective error correction code (ECC) function is provided. The semiconductor memory device divides a memory cell array into blocks according to data retention characteristics of memory cells. A block in which there are a plurality of fail cells generated at a refresh rate of a refresh cycle that is longer than a refresh cycle defined by the standards of the semiconductor device is selected from among the divided blocks. The selected block repairs the fail cells by performing the ECC function. The other blocks repair the fail cells by using redundancy cells. Accordingly, a refresh operation is performed on the memory cells of the memory cell array at the refresh rate of the refresh cycle that is longer than the refresh cycle by the standards of the semiconductor device.

Abstract translation: 提供了具有选择性纠错码（ECC）功能的半导体存储器件。 半导体存储器件根据存储器单元的数据保持特性将存储单元阵列划分成块。 从分割块中选择存在以比由半导体器件的标准定义的刷新周期更长的刷新周期的刷新率产生的多个故障单元的块。 所选的块通过执行ECC功能来修复故障单元。 其他块通过使用冗余单元来修复故障单元。 因此，通过半导体器件的标准，以比刷新周期长的刷新周期的刷新率对存储单元阵列的存储单元进行刷新操作。