摘要:
A method of decoding a low density parity check (LDPC) code, includes dividing a parity check matrix of the LDPC code, into a plurality of sub blocks. The method further includes, for each of a plurality of decoding iterations, performing a node operation of each of target sub blocks among the plurality of sub blocks, the target sub blocks corresponding to a present decoding iteration among the plurality of decoding iterations, in a decoding schedule, estimating a reliability of each of the target sub blocks, based on a result of the node operation of each of the target sub blocks, and adjusting the decoding schedule, based on the reliability of each of the target sub blocks.
摘要:
A semiconductor memory device includes: a memory cell array including a plurality of memory cells; an error correction code (ECC) engine configured to detect and/or correct at least one error bit in read data and configured to generate a decoding status flag indicative of whether the at least one error bit is detected and/or corrected, wherein the read data is read from the memory cell array; a channel interface circuit configured to receive the read data and the decoding status flag from the ECC engine and configured to transmit the read data and the decoding status flag to a memory controller, wherein the channel interface circuit is configured to transmit the decoding status flag to the memory controller through a pin; and a control logic circuit configured to control the ECC engine and the channel interface circuit in response to an address and a command from the memory controller.
摘要:
A list decoding method for a polar code includes generating a tree-type decoding graph for input codeword symbols; the generating a tree-type decoding graph including, generating a decoding path list to which a decoding edge is added based on a reliability of a decoding path, the decoding path list being generated such that, among decoding paths generated based on the decoding edge, decoding paths within a threshold number of critical paths survive within the decoding path list in an order of high likelihood probability, and determining an estimation value, which corresponds to a decoding path having a maximum likelihood probability from among decoding paths of the decoding path list, as an information word.
摘要:
A semiconductor memory device includes: a memory cell array including a plurality of memory cells; an error correction code (ECC) engine configured to detect and/or correct at least one error bit in read data and configured to generate a decoding status flag indicative of whether the at least one error bit is detected and/or corrected, wherein the read data is read from the memory cell array; a channel interface circuit configured to receive the read data and the decoding status flag from the ECC engine and configured to transmit the read data and the decoding status flag to a memory controller, wherein the channel interface circuit is configured to transmit the decoding status flag to the memory controller through a pin; and a control logic circuit configured to control the ECC engine and the channel interface circuit in response to an address and a command from the memory controller.