公开(公告)号：US20170345822A1

公开(公告)日：2017-11-30

申请号：US15676317

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee Sang Kwon ,  Boun YOON ,  Sangjine PARK ,  Myunggeun SONG ,  Ki-Hyung KO ,  Jiwon YUN

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49

Abstract: Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.