公开(公告)号：US20230387297A1

公开(公告)日：2023-11-30

申请号：US18151021

申请日：2023-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Heun Lee ,  Yong Seok Kim ,  Hyun Cheol Kim ,  Dae Won Ha

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/78391 ,  H01L29/516 ,  H01L29/401 ,  H01L29/6684

Abstract: A semiconductor device including a ferroelectric field effect transistor (FeFET) and a method for fabricating the same are provided. The semiconductor device includes a substrate, a gate electrode film including a metal element, on the substrate, a gate insulating film including a ferroelectric material between the substrate and the gate electrode film, and a buffer oxide film including an oxide of a semiconductor material between the gate insulating film and the gate electrode film, the buffer oxide film being in contact with the gate insulating film.